Thermal stability enhancement of GaN-based devices: towards highly reliable MOSHEMT

Medjdoub, FaridFaridMedjdoubDerluyn, JoffJoffDerluynCheng, KaiKaiChengDegroote, StefanStefanDegrooteGermain, MarianneMarianneGermainBorghs, GustaafGustaafBorghs2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/14142Thermal stability enhancement of GaN-based devices: towards highly reliable MOSHEMTProceedings paper