GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al2O3 gate oxide

Merckling, ClementClementMercklingSun, XiaoXiaoSunAlian, AliRezaAliRezaAlianBrammertz, GuyGuyBrammertzAfanasiev, ValeriValeriAfanasievHoffmann, Thomas Y.Thomas Y.HoffmannHeyns, MarcMarcHeynsCaymax, MattyMattyCaymaxDekoster, JohanJohanDekoster2021-10-192021-10-1920110021-8979https://imec-publications.be/handle/20.500.12860/19421GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al2O3 gate oxideJournal article