Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches

Wang, GangGangWangLoo, RogerRogerLooSouriau, LaurentLaurentSouriauTakeuchi, ShotaroShotaroTakeuchiDe Jaeger, BriceBriceDe JaegerLee, WWLeeCaymax, MattyMattyCaymaxLin, VicVicLinVandervorst, WilfriedWilfriedVandervorstBlanpain, BartBartBlanpainHeyns, MarcMarcHeyns2021-10-182021-10-182009https://imec-publications.be/handle/20.500.12860/16519Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenchesMeeting abstract