Scaling study of contact operation at constant current in self-aligned top-gated oxide semiconductor field-effect transistors

Chien, Yu-ChiehYu-ChiehChienNag, ManojManojNagGenoe, JanJanGenoeRolin, CedricCedricRolin2022-08-292022-07-282022-07-292022-08-292022-090038-1101WOS:000827395800002https://imec-publications.be/handle/20.500.12860/40178Scaling study of contact operation at constant current in self-aligned top-gated oxide semiconductor field-effect transistorsJournal article10.1016/j.sse.2022.108406WOS:000827395800002