Ultimate Ge passivation: process and materials characterization of ultrathin Si cap layers grown on Ge substrates

Vincent, BenjaminBenjaminVincentCaymax, MattyMattyCaymaxVandervorst, WilfriedWilfriedVandervorstValev, VentislavVentislavValevVerbiest, ThierryThierryVerbiestLoo, RogerRogerLoo2021-10-192021-10-192010https://imec-publications.be/handle/20.500.12860/18300Ultimate Ge passivation: process and materials characterization of ultrathin Si cap layers grown on Ge substratesMeeting abstract