1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack

Yan, L.L.YanSimoen, EddyEddySimoenOlsen, S.H.S.H.OlsenAkheyar, AmalAmalAkheyarClaeys, CorCorClaeysO'Neill, A.G.A.G.O'Neill2021-10-182021-10-1820090038-1101https://imec-publications.be/handle/20.500.12860/165711/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stackJournal article