Stability of Schottky Barrier Diode Integrated in p-GaN Enhancement-mode GaN Power Technology

Gallardo, Jethro OroceoJethro OroceoGallardoDe Jaeger, BriceBriceDe JaegerDash, SachidanandaSachidanandaDashTang, Shun-WeiShun-WeiTangTran, Thanh NgaThanh NgaTranWellekens, DirkDirkWellekensBakeroot, BenoitBenoitBakerootDecoutere, StefaanStefaanDecoutereWu, Tian-LiTian-LiWu2022-05-032022-04-282022-05-0320211946-1550WOS:000782378200039https://imec-publications.be/handle/20.500.12860/39690Stability of Schottky Barrier Diode Integrated in p-GaN Enhancement-mode GaN Power TechnologyProceedings paper10.1109/IPFA53173.2021.9617330978-1-6654-3988-6WOS:000782378200039ALGAN/GANTRANSISTORS