Strain enhanced Low-VT CMOS featuring La/Al-doped HfSiO/TaC and 10ps invertor delay

Kubicek, StefanStefanKubicekSchram, TomTomSchramRohr, ErikaErikaRohrParaschiv, VasileVasileParaschivVos, RitaRitaVosDemand, MarcMarcDemandAdelmann, ChristophChristophAdelmannWitters, ThomasThomasWittersNyns, LauraLauraNynsDelabie, AnneliesAnneliesDelabieRagnarsson, Lars-AkeLars-AkeRagnarssonChiarella, ThomasThomasChiarellaKerner, ChristophChristophKernerMercha, AbdelkarimAbdelkarimMerchaParvais, BertrandBertrandParvaisAoulaiche, MarcMarcAoulaicheOrtolland, ClaudeClaudeOrtollandYu, HongYuHongYuYuVeloso, AnabelaAnabelaVelosoWitters, LiesbethLiesbethWittersSinganamalla, RaghunathRaghunathSinganamallaKauerauf, ThomasThomasKaueraufBrus, StephanStephanBrusVrancken, ChristaChristaVranckenChang, V.S.V.S.ChangChang, Shou-ZenShou-ZenChangMitsuhashi, RiichirouRiichirouMitsuhashiOkuno, YasutoshiYasutoshiOkunoAkheyar, AmalAmalAkheyarCho, Hag-JuHag-JuChoHooker, J.J.HookerO'Sullivan, BarryBarryO'SullivanVan Elshocht, SvenSvenVan ElshochtDe Meyer, KristinKristinDe MeyerJurczak, GosiaGosiaJurczakAbsil, PhilippePhilippeAbsilBiesemans, SergeSergeBiesemansHoffmann, Thomas Y.Thomas Y.Hoffmann2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/13964Strain enhanced Low-VT CMOS featuring La/Al-doped HfSiO/TaC and 10ps invertor delayProceedings paper