Length dependent transition of the dominant 1/f noise mechanism in Si-passivated Ge-on-Si pMOSFETs

Simoen, EddyEddySimoenFirrincieli, AndreaAndreaFirrincieliLeys, FrederikFrederikLeysLoo, RogerRogerLooDe Jaeger, BriceBriceDe JaegerMitard, JeromeJeromeMitardClaeys, CorCorClaeys2021-10-182021-10-182009https://imec-publications.be/handle/20.500.12860/16231Length dependent transition of the dominant 1/f noise mechanism in Si-passivated Ge-on-Si pMOSFETsProceedings paper