50 nm high performance strained Si/SiGe pMOS devices with multiple quantum wells

Collaert, NadineNadineCollaertVerheyen, PeterPeterVerheyenDe Meyer, KristinKristinDe MeyerLoo, RogerRogerLooCaymax, MattyMattyCaymax2021-10-142021-10-142002https://imec-publications.be/handle/20.500.12860/612750 nm high performance strained Si/SiGe pMOS devices with multiple quantum wellsProceedings paper