Metal-Organic Chemical Vapor Deposition Regrowth of Highly Doped n+(In)GaN Source/Drain Layers for Radio Frequency Transistors

Banerjee, SourishSourishBanerjeePeralagu, UthayasankaranUthayasankaranPeralaguAlian, AlirezaAlirezaAlianZhao, MingMingZhaoHahn, HerwigHerwigHahnMinj, AlbertAlbertMinjVanhove, BenjaminBenjaminVanhoveVohra, AnuragAnuragVohraParvais, BertrandBertrandParvaisLanger, RobertRobertLangerCollaert, NadineNadineCollaert2025-04-242024-06-092025-04-2420241862-6300WOS:001237619900001https://imec-publications.be/handle/20.500.12860/44009Metal-Organic Chemical Vapor Deposition Regrowth of Highly Doped n+(In)GaN Source/Drain Layers for Radio Frequency TransistorsJournal article10.1002/pssa.202400069WOS:001237619900001ELECTRON-TRANSPORT PROPERTIESPIT FORMATIONOHMIC CONTACTSINGANGANSIFILMSMOBILITYDEFECTSEPITAXY