Integration of 650 V GaN power ICs on 200 mm engineered substrates

Li, XiangdongXiangdongLiGeens, KarenKarenGeensWellekens, DirkDirkWellekensZhao, MingMingZhaoMagnani, AlessandroAlessandroMagnaniAmirifar, NooshinNooshinAmirifarBakeroot, BenoitBenoitBakerootYou, ShuzhenShuzhenYouFahle, DirkDirkFahleHahn, HerwigHerwigHahnHeuken, MichaelMichaelHeukenOdnoblyudov, VladVladOdnoblyudovAktas, OzgurOzgurAktasBasceri, CemCemBasceriMarcon, DenisDenisMarconGroeseneken, GuidoGuidoGroesenekenDecoutere, StefaanStefaanDecoutere2021-10-282021-10-2820200894-6507https://imec-publications.be/handle/20.500.12860/35473Integration of 650 V GaN power ICs on 200 mm engineered substratesJournal articlehttps://ieeexplore.ieee.org/document/9170524