Simulations of bias temperature instabilities in p-MOSFETs with HfySiOx-based gate dielectrics

Houssa, MichelMichelHoussaBizzari, C.C.BizzariAutran, J.L.J.L.Autran2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9061Simulations of bias temperature instabilities in p-MOSFETs with HfySiOx-based gate dielectricsProceedings paper