Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si-O-H) and thermal oxide (SiO2 or Si-O-N)

Green, MartinMartinGreenHo, M.Y.M.Y.HoBusch, B.B.BuschWilk, G.D.G.D.WilkSorsch, T.T.SorschConard, ThierryThierryConardBrijs, BertBertBrijsVandervorst, WilfriedWilfriedVandervorstRäisänen, P.I.P.I.RäisänenMuller, D.D.MullerBude, M.M.BudeGrazul, J.J.Grazul2021-10-142021-10-142002https://imec-publications.be/handle/20.500.12860/6367Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si-O-H) and thermal oxide (SiO2 or Si-O-N)Journal article