Study of interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics

Baert, BrunoBrunoBaertGupta, SomyaSomyaGuptaSchmeits, MarcelMarcelSchmeitsSimoen, EddyEddySimoenNguyen, Ngoc DuyNgoc DuyNguyen2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/22006Study of interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristicsProceedings paper