Depth profiling of B through silicide on silicon structures, using SIMS and resonant post-ionisation SIMS

De Bisschop, PeterPeterDe BisschopGomez, G.G.GomezGeenen, LucLucGeenenVandervorst, WilfriedWilfriedVandervorst2021-09-292021-09-291995https://imec-publications.be/handle/20.500.12860/579Depth profiling of B through silicide on silicon structures, using SIMS and resonant post-ionisation SIMSProceedings paper