Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE

Farvacque, J. L.J. L.FarvacqueBougrioua, ZahiaZahiaBougriouaMoerman, IngridIngridMoermanVan Tendeloo, G.G.Van TendelooLebedev, O.O.Lebedev2021-10-062021-10-061999https://imec-publications.be/handle/20.500.12860/3452Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPEJournal article