Tensile-strained GeSn metal-oxide-semiconductor field-effect transistor devices on Si(111) using solid phase epitaxy

Lieten, RubenRubenLietenMaeda, TatsuroTatsuroMaedaJevasuwan, WipakornWipakornJevasuwanHattori, HiroyukiHiroyukiHattoriUchida, NoriyukiNoriyukiUchidaMiura, ShuShuMiuraTanaka, MasatoshiMasatoshiTanakaLocquet, Jean-PierreJean-PierreLocquet2021-10-212021-10-2120131882-0778https://imec-publications.be/handle/20.500.12860/22697Tensile-strained GeSn metal-oxide-semiconductor field-effect transistor devices on Si(111) using solid phase epitaxyJournal articlehttp://apex.jsap.jp/link?APEX/6/101301/