Veloso, AnabelaAnabelaVelosoRagnarsson, Lars-AkeLars-AkeRagnarssonCho, Moon JuMoon JuChoDevriendt, KatiaKatiaDevriendtKellens, KristofKristofKellensSebaai, FaridFaridSebaaiSuhard, SamuelSamuelSuhardBrus, StephanStephanBrusCrabbe, YvoYvoCrabbeSchram, TomTomSchramRohr, ErikaErikaRohrParaschiv, VasileVasileParaschivEneman, GeertGeertEnemanKauerauf, ThomasThomasKaueraufDehan, MorinMorinDehanHong, Sug-HunSug-HunHongYamaguchi, ShinpeiShinpeiYamaguchiTakeoka, ShinjiShinjiTakeokaHiguchi, YuichiYuichiHiguchiTielens, HildeHildeTielensVan Ammel, AnnemieAnnemieVan AmmelFavia, PaolaPaolaFaviaBender, HugoHugoBenderFranquet, AlexisAlexisFranquetConard, ThierryThierryConardLi, X.X.LiPey, K.-L.K.-L.PeyStruyf, HerbertHerbertStruyfMertens, PaulPaulMertensAbsil, PhilippePhilippeAbsilHoriguchi, NaotoNaotoHoriguchiHoffmann, Thomas Y.Thomas Y.Hoffmann2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/20047Gate-last vs. gate-first technology for aggressively scaled EOT Logic/RF CMOSProceedings paper