Epitaxial Growth of Active Si on Top of SiGe Etch Stop Layer in View of 3D Device Integration

Becker, L.L.BeckerStorck, P.P.StorckLoo, RogerRogerLooJourdain, AnneAnneJourdainRengo, GianlucaGianlucaRengoPorret, ClémentClémentPorretHikavyy, AndriyAndriyHikavyyLiebens, MaartenMaartenLiebensBeyer, GeraldGeraldBeyerBeyne, EricEricBeyne2022-03-022022-03-0220212162-8769WOS:000609384400001https://imec-publications.be/handle/20.500.12860/39208Epitaxial Growth of Active Si on Top of SiGe Etch Stop Layer in View of 3D Device IntegrationJournal article10.1149/2162-8777/abd885WOS:000609384400001CHEMICAL-VAPOR-DEPOSITIONSPECTROSCOPIC ELLIPSOMETRYCARRIER GASIN-LINETEMPERATURESI1-XGEXQUALITYSILICON