The potential and restrictions of the double derivative method for threshold voltage extraction in SOI MOSFETs

Simoen, EddyEddySimoenVandamme, EwoutEwoutVandammeRotondaro, AntonioAntonioRotondaroClaeys, CorCorClaeys2021-09-292021-09-291994https://imec-publications.be/handle/20.500.12860/358The potential and restrictions of the double derivative method for threshold voltage extraction in SOI MOSFETsProceedings paper