Statistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimization

Tang, BaojunBaojunTangToledano Luque, MariaMariaToledano LuqueZhang, W.D.W.D.ZhangVan den Bosch, GeertGeertVan den BoschDegraeve, RobinRobinDegraeveZhang, J.F.J.F.ZhangVan Houdt, JanJanVan Houdt2021-10-212021-10-2120130167-9317https://imec-publications.be/handle/20.500.12860/23153Statistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimizationJournal article