Sub-10-9 Ohm.cm2 contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation

Everaert, Jean-LucJean-LucEveraertSchaekers, MarcMarcSchaekersYu, HaoHaoYuWang, LinlinLinlinWangHikavyy, AndriyAndriyHikavyyDate, LucienLucienDatedel Agua Borniquel, Jose IgnacioJose Ignaciodel Agua BorniquelHollar, KellyKellyHollarKhaja, FareenFareenKhajaAderhold, WolfgangWolfgangAderholdMayur, AbhilashAbhilashMayurLee, JaeYoungJaeYoungLeevan Meer, HansHansvan MeerJiang, Yu-LongYu-LongJiangDe Meyer, KristinKristinDe MeyerMocuta, DanDanMocutaHoriguchi, NaotoNaotoHoriguchi2021-10-242021-10-242017https://imec-publications.be/handle/20.500.12860/28319Sub-10-9 Ohm.cm2 contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activationProceedings paperhttp://ieeexplore.ieee.org/document/7998176/