Surface termination of HfO2 in W/HfO2 gated metal-oxide-semiconductor stacks from thermal stability point of view

Li, ZilanZilanLiPourtois, GeoffreyGeoffreyPourtoisSchram, TomTomSchramDe Gendt, StefanStefanDe GendtDe Meyer, KristinKristinDe Meyer2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/14031Surface termination of HfO2 in W/HfO2 gated metal-oxide-semiconductor stacks from thermal stability point of viewOral presentation