Experimental details of a steep-slope ferroelectric InGaAs Tunnel-FET with high-quality PZT and Modeling insights in the transient polarization

Verhulst, AnneAnneVerhulstSaeidi, AliAliSaeidiStolichnov, IgorIgorStolichnovAlian, AliRezaAliRezaAlianIwai, HiroshiHiroshiIwaiCollaert, NadineNadineCollaertIonescu, AdrianAdrianIonescu2021-10-292021-10-2920200018-9383https://imec-publications.be/handle/20.500.12860/36251Experimental details of a steep-slope ferroelectric InGaAs Tunnel-FET with high-quality PZT and Modeling insights in the transient polarizationJournal articlehttps://ieeexplore.ieee.org/document/8935490