Interplay between hopping and band transport in high-mobility disordered semiconductors at large carrier concentrations: The case of the amorphous oxide InGaZnO

Fishchuk, IvanIvanFishchukKadashchuk, AndriyAndriyKadashchukBhoolokam, AjayAjayBhoolokamde Jamblinne de Meux, AlbertAlbertde Jamblinne de MeuxPourtois, GeoffreyGeoffreyPourtoisGavrilyuk, M.MM.MGavrilyukKöhler, A.A.KöhlerBässler, H.H.BässlerGenoe, JanJanGenoeHeremans, PaulPaulHeremans2021-10-232021-10-2320161098-0121https://imec-publications.be/handle/20.500.12860/26622Interplay between hopping and band transport in high-mobility disordered semiconductors at large carrier concentrations: The case of the amorphous oxide InGaZnOJournal articlehttp://journals.aps.org/prb/abstract/10.1103/PhysRevB.93.195204