Hiblot, GaspardGaspardHiblotO'Sullivan, BarryBarryO'SullivanRonchi, NicoloNicoloRonchiBanerjee, KaustuvKaustuvBanerjee2022-03-312022-03-252022-03-302022-03-3120211930-8841WOS:000764115800011https://imec-publications.be/handle/20.500.12860/39513Antenna effect in 65nm NMOS devices with 9.5nm thick HfOx gate dielectricProceedings paper10.1109/IIRW53245.2021.9635612978-1-6654-1794-5WOS:000764115800011DAMAGEcharging damage high K reliability