Enabling complimentary FET (CFET) fabrication: selective, isotropic etch of Group IV semiconductors

Kal, SubhadeepSubhadeepKalOniki, YusukeYusukeOnikiFalugh, MatthewMatthewFalughPereira, CherylCherylPereiraWang, QiQiWangHolsteyns, FrankFrankHolsteynsSmith, JeffreyJeffreySmithMosden, AelanAelanMosdenKumar, KaushikKaushikKumarBoemmels, JuergenJuergenBoemmelsRyckaert, JulienJulienRyckaertBiolsi, PeterPeterBiolsiHurd, Trace QTrace QHurd2021-10-272021-10-272019https://imec-publications.be/handle/20.500.12860/33236Enabling complimentary FET (CFET) fabrication: selective, isotropic etch of Group IV semiconductorsMeeting abstracthttps://doi.org/10.1117/12.2514741