Modeling of doping profile in active-silicon region of silicon-on-insulator transistor as a function of channel length

Mody, JayJayModyGhosh, PrasantaPrasantaGhosh2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10895Modeling of doping profile in active-silicon region of silicon-on-insulator transistor as a function of channel lengthProceedings paper