Strained c:Si0.55Ge0.45 with Embedded e:Si0.75Ge0.25 S/D IFQW SiGe-pFET for DRAM periphery applications

Ritzenthaler, RomainRomainRitzenthalerSchram, TomTomSchramWitters, LiesbethLiesbethWittersMitard, JeromeJeromeMitardSpessot, AlessioAlessioSpessotCaillat, ChristianChristianCaillatHellings, GeertGeertHellingsEneman, GeertGeertEnemanAoulaiche, MarcMarcAoulaicheNa, Hoon JooHoon JooNaSon, YunikYunikSonNoh, Kyung BongKyung BongNohFazan, PierrePierreFazanLee, Sun GhilSun GhilLeeCollaert, NadineNadineCollaertMocuta, AndaAndaMocutaHoriguchi, NaotoNaotoHoriguchiThean, AaronAaronThean2021-10-232021-10-2320161369-8001https://imec-publications.be/handle/20.500.12860/27220Strained c:Si0.55Ge0.45 with Embedded e:Si0.75Ge0.25 S/D IFQW SiGe-pFET for DRAM periphery applicationsJournal articlehttp://www.sciencedirect.com/science/article/pii/S1369800115300998