Schram, TomTomSchramSmets, QuentinQuentinSmetsRadisic, DunjaDunjaRadisicGroven, BenjaminBenjaminGrovenThiam, ArameArameThiamLi, WaikinWaikinLiDupuy, EmmanuelEmmanuelDupuyVandersmissen, KevinKevinVandersmissenMaurice, ThibautThibautMauriceAsselberghs, IngeIngeAsselberghsRadu, IulianaIulianaRadu2022-09-222021-11-192022-09-222021NAhttps://imec-publications.be/handle/20.500.12860/38445High yield and process uniformity for 300 mm integrated WS2 FETsMeeting abstractElectrical & electronic engineeringWS2TMDC2DCVD300 mmFETintegration