High performance strained Germanium Gate All Around p-channel devices with excellent electrostatic control for sub-30 nm Lg

Capogreco, ElenaElenaCapogrecoArimura, HiroakiHiroakiArimuraVohra, AnuragAnuragVohraPorret, ClémentClémentPorretLoo, RogerRogerLooDe Keersgieter, AnAnDe KeersgieterDupuy, EmmanuelEmmanuelDupuyMarinov, DaniilDaniilMarinovHikavyy, AndriyAndriyHikavyySebaai, FaridFaridSebaaiMannaert, GeertGeertMannaertRagnarsson, Lars-AkeLars-AkeRagnarssonSiew, Yong KongYong KongSiewVrancken, ChristaChristaVranckenOpdebeeck, AnnAnnOpdebeeckMitard, JeromeJeromeMitardLanger, RobertRobertLangerAltamirano Sanchez, EfrainEfrainAltamirano SanchezHolsteyns, FrankFrankHolsteynsDemuynck, StevenStevenDemuynckBarla, KathyKathyBarlaDe Heyn, VincentVincentDe HeynMocuta, DanDanMocutaCollaert, NadineNadineCollaertHoriguchi, NaotoNaotoHoriguchi2021-10-272021-10-272019https://imec-publications.be/handle/20.500.12860/32635High performance strained Germanium Gate All Around p-channel devices with excellent electrostatic control for sub-30 nm LgProceedings paper