Channel Thickness Impact on the Small- and Large-Signal RF Performance of GaN HEMTs on Si with a cGaN Back-Barrier

ElKashlan, Rana Y.Rana Y.ElKashlanRodriguez, RaulRaulRodriguezYadav, SachinSachinYadavPeralagu, UthayasankaranUthayasankaranPeralaguAlian, AliRezaAliRezaAlianCollaert, NadineNadineCollaertWambacq, PietPietWambacqParvais, BertrandBertrandParvais2023-01-052022-10-202023-01-0520220149-645XWOS:000862782300236https://imec-publications.be/handle/20.500.12860/40593Channel Thickness Impact on the Small- and Large-Signal RF Performance of GaN HEMTs on Si with a cGaN Back-BarrierProceedings paper10.1109/IMS37962.2022.9865258978-1-6654-9613-1WOS:000862782300236