Baeyens, YvesYvesBaeyensSchreurs, DominiqueDominiqueSchreursNauwelaers, BartBartNauwelaersvan der Zanden, KoenKoenvan der ZandenVan Hove, MarleenMarleenVan HoveDe Raedt, WalterWalterDe RaedtVan Rossum, MarcMarcVan Rossum2021-09-292021-09-291995https://imec-publications.be/handle/20.500.12860/511GaAs and InP-based dual-gate HEMTs for high-gain amplifiersProceedings paper