On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors

Tyaginov, StanislavStanislavTyaginovAfzalian, AryanAryanAfzalianMakarov, AlexanderAlexanderMakarovGrill, AlexanderAlexanderGrillVandemaele, MichielMichielVandemaeleCherenev, MaksimMaksimCherenevVexler, MikhailMikhailVexlerHellings, GeertGeertHellingsKaczer, BenBenKaczer2023-06-082023-02-272023-06-0820221541-7026WOS:000922926400137https://imec-publications.be/handle/20.500.12860/41185On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-TransistorsProceedings paper10.1109/IRPS48227.2022.9764568978-1-6654-7950-9WOS:000922926400137INTERFACE DEFECTSDEGRADATIONPASSIVATIONSCATTERINGHYDROGENKINETICS