Scaled, novel effective workfunction metal gate stacks for advanced Low-VT, gate-all-around vertically stacked nanosheet FETs with reduced vertical distance between sheets

Veloso, AnabelaAnabelaVelosoSimoen, EddyEddySimoenOliveira, AlbertoAlbertoOliveiraVaisman Chasin, AdrianAdrianVaisman ChasinChen, S.-C.S.-C.ChenLin, Y.Y.LinMiyashita, T.T.MiyashitaKim, M.M.KimJang, DoyoungDoyoungJangRitzenthaler, RomainRomainRitzenthalerZhou, DaisyDaisyZhouMertens, HansHansMertensPena, VanessaVanessaPenaSantoro, GaetanoGaetanoSantoroKenis, KarineKarineKenisSebaai, FaridFaridSebaaiMannaert, GeertGeertMannaertDevriendt, KatiaKatiaDevriendtHopf, TobyTobyHopfVersluijs, JankoJankoVersluijsRichard, OlivierOlivierRichardMachillot, JeromeJeromeMachillotYoshida, NaomiNaomiYoshidaHoriguchi, NaotoNaotoHoriguchi2021-10-272021-10-272019https://imec-publications.be/handle/20.500.12860/34345Scaled, novel effective workfunction metal gate stacks for advanced Low-VT, gate-all-around vertically stacked nanosheet FETs with reduced vertical distance between sheetsProceedings paper