Simoen, EddyEddySimoenHsu, BrentBrentHsuAlian, AliRezaAliRezaAlianEl Kazzi, SalimSalimEl KazziWang, ChongChongWangOri, HiroyukiHiroyukiOri2021-10-272021-10-2720190268-1242https://imec-publications.be/handle/20.500.12860/34006Deep levels in Metal-Oxide-Semiconductor Capacitors Fabricated on n-type In0.53Ga0.47As Lattice Matched to InP SubstratesJournal article