Franco, JacopoJacopoFrancoKaczer, BenBenKaczerMitard, JeromeJeromeMitardEneman, GeertGeertEnemanRoussel, PhilippePhilippeRousselCrupi, FeliceFeliceCrupiGrasser, TiborTiborGrasserWitters, LiesbethLiesbethWittersHoffmann, Thomas Y.Thomas Y.HoffmannGroeseneken, GuidoGuidoGroeseneken2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17115Implications of channel hot carrier degradation in Si0.45Ge0.55 pMOSFETsProceedings paper