Energy barriers at interfaces between (100) InxGa1-xAs(0<=x<=0.53) and atomic layer deposited Al2O3 and HfO2

Afanasiev, ValeriValeriAfanasievStesmans, AndreAndreStesmansBrammertz, GuyGuyBrammertzDelabie, AnneliesAnneliesDelabieSioncke, SonjaSonjaSionckeO'Mahony, EEO'MahonyPovey, I.M.I.M.PoveyPemble, M.E.M.E.PembleO'Connor, E.E.O'ConnorHurley, P.K.P.K.HurleyNewcomb, S.B.S.B.Newcomb2021-10-172021-10-1720090003-6951https://imec-publications.be/handle/20.500.12860/14879Energy barriers at interfaces between (100) InxGa1-xAs(0<=x<=0.53) and atomic layer deposited Al2O3 and HfO2Journal articlehttp://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000094000020202110000001&idtype=cvips&prog=search