Application of selective epitaxial growth for merging fins in source/drain areas of sub 20 nm FinFET transistors

Hikavyy, AndriyAndriyHikavyyChew, Soon AikSoon AikChewBoccardi, GuillaumeGuillaumeBoccardiFavia, PaolaPaolaFaviaLoo, RogerRogerLoo2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/22488Application of selective epitaxial growth for merging fins in source/drain areas of sub 20 nm FinFET transistorsProceedings paper