Low-current operation of novel Gd2O3-based RRAM cells with large memory window

Chen, MichaelMichaelChenGoux, LudovicLudovicGouxFantini, AndreaAndreaFantiniRedolfi, AugustoAugustoRedolfiGroeseneken, GuidoGuidoGroesenekenJurczak, GosiaGosiaJurczak2021-10-232021-10-232016-091862-6300https://imec-publications.be/handle/20.500.12860/26429Low-current operation of novel Gd2O3-based RRAM cells with large memory windowJournal article10.1002/pssa.201532377http://onlinelibrary.wiley.com/doi/10.1002/pssa.201532377/abstract;jsessionid=D0D0969D060D818B033A32F870B91074.f02t04?userIsAuth