Build-up of the altered layer as function of the ion-fluency in Si-Ge

Huyghebaert, CedricCedricHuyghebaertBrijs, BertBertBrijsVandervorst, WilfriedWilfriedVandervorst2021-10-142021-10-142000https://imec-publications.be/handle/20.500.12860/4441Build-up of the altered layer as function of the ion-fluency in Si-GeOral presentation