Crystalline defect analysis in epitaxial Si0.7Ge0.3 layer using site-specific ECCI-STEM

Han, HanHanHanStrakos, LiborLiborStrakosHantschel, ThomasThomasHantschelVystavel, TomasTomasVystavelPorret, ClémentClémentPorretLoo, RogerRogerLooCaymax, MattyMattyCaymax2022-03-032022-03-0320210968-4328WOS:000704887100004https://imec-publications.be/handle/20.500.12860/39274Crystalline defect analysis in epitaxial Si0.7Ge0.3 layer using site-specific ECCI-STEMJournal article10.1016/j.micron.2021.103123WOS:000704887100004ELECTRON CHANNELING CONTRASTDISLOCATIONSMEDLINE:34343885