Selective oxidation of SiGe less than 50% versus Si using Low Temperature Steam Anneal at T less than or equal to 650°C

Wostyn, KurtKurtWostynCrovato, NicolaNicolaCrovatoBlancher, KenKenBlancherVan Bortel, ThomasThomasVan BortelKimura, YosukeYosukeKimuraMertens, HansHansMertensVaisman Chasin, AdrianAdrianVaisman ChasinConard, ThierryThierryConardDouhard, BastienBastienDouhardMeersschaut, JohanJohanMeersschautSteenbergen, JohnnyJohnnySteenbergenRondas, DirkDirkRondasVan Opstal, TinnekeTinnekeVan OpstalHikavyy, AndriyAndriyHikavyyMilenin, AlexeyAlexeyMileninLoo, RogerRogerLooHolsteyns, FrankFrankHolsteynsHoriguchi, NaotoNaotoHoriguchi2021-10-262021-10-262018-05https://imec-publications.be/handle/20.500.12860/32279Selective oxidation of SiGe less than 50% versus Si using Low Temperature Steam Anneal at T less than or equal to 650°CMeeting abstract