Impact of gate oxide nitridation process on 1/f noise in 0.18 micron CMOS

Da Rold, MartinaMartinaDa RoldSimoen, EddyEddySimoenMertens, S.S.MertensSchaekers, MarcMarcSchaekersBadenes, GonçalGonçalBadenesDecoutere, StefaanStefaanDecoutere2021-10-142021-10-142001https://imec-publications.be/handle/20.500.12860/5177Impact of gate oxide nitridation process on 1/f noise in 0.18 micron CMOSJournal article