Nanometer-deep junctions with high doping concentration for Ge SDEs using solid-source doping and flash lamp annealing

Tanimura, HideakiHideakiTanimuraFuse, KazuhikoKazuhikoFuseYamada, TakahiroTakahiroYamadaAoyama, TakayukiTakayukiAoyamaKato, ShinichiShinichiKatoKobayashi, IppeiIppeiKobayashiBlanquart, TimotheeTimotheeBlanquartCollaert, NadineNadineCollaert2021-10-242021-10-242017-06https://imec-publications.be/handle/20.500.12860/29554Nanometer-deep junctions with high doping concentration for Ge SDEs using solid-source doping and flash lamp annealingProceedings paperhttp://ieeexplore.ieee.org/document/7966501/