Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs

Put, SofieSofiePutMehta, H.H.MehtaCollaert, NadineNadineCollaertVan Uffelen, M.M.Van UffelenLeroux, P.P.LerouxClaeys, CorCorClaeysLukyanchikova, N.N.LukyanchikovaSimoen, EddyEddySimoen2021-10-182021-10-1820100038-1101https://imec-publications.be/handle/20.500.12860/17858Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETsJournal article