Panarella, LucaLucaPanarellaKaczer, BenBenKaczerSmets, QuentinQuentinSmetsVerreck, DevinDevinVerreckSchram, TomTomSchramCott, DaireDaireCottLin, DennisDennisLinTyaginov, StanislavStanislavTyaginovAsselberghs, IngeIngeAsselberghsLockhart de la Rosa, Cesar JavierCesar JavierLockhart de la RosaKar, Gouri SankarGouri SankarKarAfanasiev, ValeriValeriAfanasiev2023-11-282023-07-152023-11-2820231541-7026WOS:001007431500055https://imec-publications.be/handle/20.500.12860/42157Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETsProceedings paper10.1109/IRPS48203.2023.10117803978-1-6654-5672-2WOS:001007431500055AL2O3