Impact of crystal orientation on ohmic contact resistance of enhancement-mode pGaN gate high electron mobility transistors on 200 mm Si substrates

Van Hove, MarleenMarleenVan HovePosthuma, NielsNielsPosthumaGeens, KarenKarenGeensWellekens, DirkDirkWellekensDecoutere, StefaanStefaanDecoutere2021-10-242021-10-242017-09https://imec-publications.be/handle/20.500.12860/29705Impact of crystal orientation on ohmic contact resistance of enhancement-mode pGaN gate high electron mobility transistors on 200 mm Si substratesProceedings paperhttps://confit.atlas.jp/guide/event/ssdm2017/top?lang=en