On-wafer characterization of In0.52Al0.48As/In0.53Ga0.47As modulation-doped field-effect transistor with 4.2 ps switching time and 3.2 ps delay

Zeng, A.A.ZengJackson, K.K.JacksonVan Hove, MarleenMarleenVan HoveDe Raedt, WalterWalterDe Raedt2021-09-292021-09-291995https://imec-publications.be/handle/20.500.12860/1038On-wafer characterization of In0.52Al0.48As/In0.53Ga0.47As modulation-doped field-effect transistor with 4.2 ps switching time and 3.2 ps delayJournal article